简介：Au/Al_2O_3/Al金属/绝缘体/金属连接(MIMJ)和Au/SiO_2/Simetal/insulator/Si连接(MISJ)成功地被构造了。这些连接的轻排放被表面电浆子电磁声子(SPP)在表面粗糙下面调停。从MISJ的轻排放从MIMJ比那更一致、稳定。MISJ的轻力量比MIMJ的高是大约2份～3订单。MISJ的轻排放光谱特别被分析。在光谱，有一座主要山峰在610nm～6的波长定位了40nm，它主要由于有在Au/air和Au/SiO_2接口的表面粗糙的SPP的夫妇。在更短的波长区域位于光谱的一座弱山峰也被发现，它被doped-Si血浆摆动的直接放射引起。

简介：Inthispaper,wepresentsimulationresultsofanelectroopticalvariableopticalattenuator(VOA)inte-gratedinsilicon-on-insulatorwaveguide.Thedeviceisfunctionallybasedonfreecarriersabsorptiontoachieveattenuation.Beampropagationmethod(BPM)andtwo-dimensionalsemiconductordevicesimu-lationtoolPISCES-Ⅱwereusedtoanalyzethedcandtransientcharacteristicsofthedevice.Thedevicehasaresponsetime(includingrisetimeandfalltime)lessthan200ns,muchfasterthanthethermoopticandmicro-electromechanicalsystems(MEMSs)basedVOAs.

简介：Inordertorealizetheplanargradientrefractiveindex(GRIN)microlenswhichisbaseduponporoussilicon(PSi)andfabricatedonsilicononinsulator(SOI),anovelanodizationmethodisusedbyapplyinglateralelectricfield.Themicrolenswithsmoothvariationoftheeffectiveopticalthicknessisachieved.Thelensistransparentintheinfraredregion,includingtheopticalcommunicationwindow(1.3μm

简介：Asurfacechargemeasuringsystemusingthecapacitiveprobemethodisanalysed.Thepresentstudyshowsthatthemeasuringsystemcannothaveasteady-stateoutputandthattheerrorresultingfromthefiniteleakageresistanceofthemeasuringsystemwillbeaccumulatedduringthemeasuringprocess.Basedonthetheoreticalanalysisanewtypeprobewithalowchargeleakageandhighresolutionisdesigned.ThesurfacechargeaccumulatedontheTefloninsulatorunderaDCvoltageismeasuredusingthisnewprobeandsomephenomenaofthesurfacechargingarereported.

简介：在这评论，我们在场拓扑的绝缘体(TI)和超导的nanowires和电影的一些最近的实验的一篇摘要。电子电子相互作用(EEI)，弱反本地化(WAL)和效果由运输大小在拓扑的绝缘体电影发现了的各向异性的磁致电阻(AMR)被报导。然后，在非超导的nanowires的超导的电影，桥和nanowires和最近效果的运输性质被描述。最后，在拓扑的绝缘体和超导体(SC)之间的相互影响也被讨论。

简介：AsimplephotoelasticopticalmodulatorwithaFabry-Perotcavitybasedonthesilicon-on-insulatorsystemwasfabricated.A50%modulationdepthhasbeenobtatinedatcurrentdensityofabout1.5×10^3A/cm^2.Theinsertionlosswasabout15dB.

简介：在一个光格子描述交往的波色子的Bose-Hubbard模型在大草原上的树丛阶段的附近与单个离子的anisotropy被归结为一个简单spin-1XY模型。我们在有效模型上基于一个限制苏(3)伪波色子代表建议一个吝啬地的理论学习superfluid-Mott-insulator阶段转变的性质。在theBrillouin地区的基本刺激系列和平均粒子数字变化集中的Bycalculating，我们发现精力差距连续地消失在附近(J_(XY)/J_z)_c≈0.175并且(J_(XY)/J_z)_c≈0.094为2D和3D立方的格子分别地，在超流体顺序参数从零来，进超流体的莫特绝缘体状态变化说的地方。

简介：Wepresentintegrated-opticbuildingblocksandfunctionalphotonicdevicesbasedonamorphoussiliconon-insulatortechnology.Efficientdeep-etchedfiber-to-chipgratingcouplers,low-losssingle-modephotonicwirewaveguides,andcompactpowersplittersarepresented.Basedonthesub-μmphotonicwires,2×2Mach–Zehnderinterferometersandadd/dropmicroringresonators(MRRs)withlowdevicefootprintsandhighfinesseupto200wererealizedandstudied.Compactpolarizationrotatorsandsplitterswith≥10dBpolarizationextinctionratiowerefabricatedforthepolarizationmanagementon-chip.Thetuningandtrimmingcapabilitiesofthematerialplatformaredemonstratedwithefficientmicroheatersandapermanentdevicetrimmingmethod,whichenabledtherealizationofenergy-efficientphotoniccircuits.Wavelengthmultiplexersintheformofcascadedfilterbanksand4×4routersbasedonMRRswitchesarepresented.Fabricationimperfectionswereanalyzedandpermanentlycorrectedbyanaccuratelaser-trimmingmethod,thusenablingeight-channelmultiplexerswithrecordlowmetricsofsub-mWstaticpowerconsumptionand≤1°Ctemperatureoverhead.Thehighqualityofthefunctionaldevices,thehightuningefficiency,andtheexcellenttrimmingcapabilitiesdemonstratethepotentialtorealizelow-cost,denselyintegrated,andultralow-power3D-stackedphotoniccircuitsontopofCMOSmicroelectronics.

简介：Wedemonstrateasilicon-basedmicrowavephotonicfilter(MPF)withflattoppassbandandadjustablebandwidth.TheproposedMPFisrealizedbyusinga10th-ordermicroringresonator(MRR)andaphotodetector,bothofwhichareintegratedonaphotonicchip.Thefullwidthathalf-maximum(FWHM)bandwidthoftheopticalfilterachievedatthedropportofthe10th-orderMRRis21.6GHz.Therippleofthepassbandislessthan0.3dB,whiletherejectionratiois32dB.Byadjustingthedeviationoftheopticalcarrierwavelengthfromthecenterwavelengthoftheopticalbandpassfilter,thebandwidthoftheMPFcanbegreatlychanged.Intheexperiment,theFWHMbandwidthoftheproposedMPFistunedfrom5.3to19.5GHz,andtherejectionratioishigherthan30dB.

简介：

简介：Inrecentyears,topologicalinsulatorshavearousedtheattentionofagreatnumberofscientistsduetotheiruniqueelectronicstructuresandpeculiarphysicalproperties.Triggeredbythesimilarelectronicstructuresasgraphene,thebroadbandnonlinearabsorptionpropertiesoftopologicalinsulatorswereinvestigated.Moreover,themode-lockedorQ-switchedfiberlasersbasedontopologicalinsulatorswererealizedforbroadbandoperatingwavelength.Here,wepresentanoverviewofthepreparation,transferring,linearandnonlinearopticalproperties,andtheirapplicationsoftopologicalinsulatorsinpulsedfiberlasers.Thepulsedfiberlaserstowardsmidinfraredregimeshavebeenproposed.

简介：ThemicrostructureandopticalpropertiesofaburiedlayerformedbyO+(200keV,1.8×1018/cm2)andN+(180keV,4×1017/cm2)co-implantationandannealedat1200℃for2hhavebeeninvestigatedbyAugerelectron,IRabsorptionandreflectionspectroscopicmeasurements.TheresultsshowthattheburiedlayerconsistsofsilicondioxideandSiOx（x<2）andthenitrogensegregatestothewingsoftheburiedlayerwhereitformsanoxynitride.BydetailtheoreticalanalysisandcomputersimulationoftheIRreflectioninterferencespectrum,therefractiveindexprofilesoftheburiedlayerwereobtained.

简介：AKondo-likeeffect,namely,theupturnofresistivityatlowtemperatures,isobservedinperovskitemanganitewhennonmagneticinsulatorsaredopedassecondaryphase.Inthispaper,thelow-temperatureresistivityupturneffecthasbeenarguedtooriginatefrominterfacialmagneticphasereconstruction.HeisenbergspinlatticeshavebeensimulatedusingtheMonteCarlomethodtorevealphasecompetitionaroundsecondaryphaseboundary,namely,manganite-insulatorboundarythatbehaveswithaweakantiferromagnetictendency.Moreover,theresistornetworkmodelbasedondouble-exchangeconductivemechanismreproducesthelow-temperatureresistivityupturneffect.Ourworkprovidesareasonablephysicalmechanismtounderstandthenoveltransportbehaviorsinmicrostructuresofcorrelatedelectronsystems.

简介：Inrecentyears,mteractingtopologicalinsulatorshaveemergedasnewfrontiersincondensedmatterphysics,andthehotlystudiedtopologicalKondoinsulator(TKI)isoneofsuchprototypes.Althoughitszero-temperatureground-statehasbeenwidelyinvestigated,thefinitetemperaturephysicsonTKIislargelyunknown.Here,weexplorethefinitetemperaturepropertiesinasimplifiedmodelforTKI.namelytheone-dimensionalp-waveperiodicAndersonmodel,withnumericallyexactdeterminantquantumMonteCarlosimulation.ItisfoundthatthetopologicalHaldanephaseestablishedforgroimdstateisstillstableagainstsmallthermalfluctuationanditscharacteristicedgemagnetizationdevelopsatlowtemperature.Suchfactsemphasizetherobustnessof(symmetry-protected)topologicalorderagainsttemperatureeffect,whichalwaysexistsatrealphysicalworld.Moreover,weusethesaturatedlow-Tspinstructurefactorandthe1/T-lawofsusceptibilitytodetectthefreeedgespinmoment,interestinglythelow-temperatureupturnbehaxiorofthelatteroneissimilartoexperimentalfindinginSniBgatT<50K.Itimpliesthatsimilarphysicalmechanismmayworkbothforidealizedmodelsandrealisticcorrelatedelectronmaterials.WehavealsoidentifiedanemergentenergyscaleTcr.whichsignalsacrossoverintointerestinglow-TregimeandseemstobetheexpectedRuderman-Kittel-KasuyaYosidacoupling.Finally,thecollectiveKondoscreeningeffecthasbeenexaminedanditisheavilyreducedatboundarywhichmaygiveafruitfulplaygroundfornovelphysicsbeyondthewellestablishedHaldanephaseandtopologicalbandinsulators.

简介：Aplasmonicrefractiveindexsensorbasedonmetal-insulator-metal(MIM)waveguide-coupledstructureisproposedanddemonstratedinthispaper.Thephysicalmechanismofthedeviceisdeduced,andthefinitedifferencetimedomain(FDTD)methodisemployedtosimulateandstudyitsindexsensingcharacteristics.Bothanalyticandsimulatedresultsshowthattheresonantwavelengthofthesensorhasalinearrelationshipwiththerefractiveindexofmaterialundersensing.Basedontherelationship,therefractiveindexofthematerialcanbeobtainedfromthedetectionoftheresonantwavelength.Theresultsshowthatthesensitivityofthesensorcanexceed1600nm/RIU,anditcanbeusedinchemicalandbiologicaldetections.

简介：ThetemperaturedependenceofresistivityρofYSZdopingcompositeof(1-x)La0.67Ca0.33MnO3+xYSZandY2O3dopingcompositeof(1-y)La0.67MnO3+yY2O3isinvestigated,respectively,inatemperaturerange77-300K,wheretheYSZrepresentsyttria-stabilizedzirconia(8mol%Y2O3+92mol%ZrO2).ExperimentalresultsshowthattheYSZdopinglevelhasimportanteffectsonboththemetal-insulator(M-I)transitiontemperaturesandzerofieldresistivityofthecompositesof(1-x)La0.67Ca0.33MnO3+xYSZ.However,theY2O3dopinglevelhaslittleeffectontheM-Itransitiontemperaturesandthezerofieldresistivityof(1-y)La0.67Ca0.33MnO3+yY2O3onlyincreasesslightly.Thedifferencebetweenthetwotypesofcompositesmaymainlyresultsfromthedifferentdistributionofhighresistancephasesatthegrainboundariesand/orsurfacesofLa0.67Ca0.33MnO3grainsratherthanthesubstitutionofLa^3+ionswithY^3+ions.

简介：Wesuggestalowcross-talkplasmoniccross-connectorbasedonametal/insulator/metalcavityandwaveguides.Weseparatelyinvestigatetheisolatedcavitymode,thewaveguidemode,andthecombinationofcavityandwaveguidemodesusingafinite-differenttime-domainmethod.Duetoresonanttunnelingandthecutofffrequencyoftheoddwaveguidemode,ourproposedstructureachievesahighthroughputtransmissionratioandeliminatescross-talk.Furthermore,theproposedstructurehasabroadbandtunabilityof587nm,whichcanbeachievedbymodulatingthecavityairgapthickness.Thisstructureenablestheminiaturizationofphotonicintegratedcircuitsandsensingapplications.

简介：可重排的非阻塞的silicon-on-insulator-basedthermo眼有点尺寸变换器(SSC)和一个新开车电路的4脳4开关矩阵被设计并且制作。一个点尺寸变换器(SSC)的介绍减少了到不到10dB和新开车电路的插入损失改进了反应速度到不到1渭s。国家关键Basic部分地支持的CLC数字TN305中国在下面的研究专辑基础资助没有。G2000-03-66，和国家高技术不到资助号码60336010在资助号码2002AA312060，和中国的国家自然科学基础下面中国编程序。

简介：Ｓｉｌｉｃｏｎ－ｏｎ－ｉｎｓｕｌａｔｏｒ１×２Ｙ－ｊｕｎｃｔｉｏｎＯｐｔｉｃａｌＳｗｉｔｃｈＢａｓｅｄｏｎＷａｖｅｇｕｉｄｅ－ｖａｎｉｓｈｉｎｇＥｆｅｃｔ①②ＺＨＡＯＣｅｚｈｏｕ（Ｍｉｃｒｏｅｌｅｃｔｒｏｎ．Ｉｎｓｔｉｔｕｔｅ，ＸｉｄｉａｎＵｎｉｖｅ...

简介：Thesilicon-on-insulator(SOI)1×2Y-junctionopticalwaveguideswitchhasbeenproposedandfabricated,whichisbasedonthelargecross-sectionsingle-moderibwaveguidecondition,thewaveguide-vanishingeffectandthefree-carrierplasmadispersioneffect.Intheswitch,theSOItechniqueutilizersiliconandsilicondioxidethermalbondingandback-polishing.Theinsertionlossandextinctionratioofthedevicearemeasuredtobelessthan4.78dBand20.8dBrespectivelyatawavelengthof1.3μmandaninjectioncurrentof45mA.Responsetimeisabout160ns.