简介：CdSthinfilmsweredepositedbytheionlayergasreaction(ILGAR)method.Structural,chemical,topographicaldevelopmentaswellasopticalandelectricalpropertiesofas-depositedandannealedthinfilmswereinvestigatedbyXRD,SEM,XPS,AFMandUV-VIS.Theresultsshowedthatthethinfilmsareuniform,compactandgoodinadhesiontothesubstrates,andthegrowthofthefilmsis2.8nm/cycle.Theevolutionofstructureundergoesfromthecubicstructuretothehexagonalonewithapreferredorientationalongthe(002)planeafterannealingat673K.AnamountofC,OandClimpuririescanbereducedbyincreasingthedryingtemperatureorbyannealinginN2atmosphere.ItwasfoundthatthebandgapoftheCdSfilmsshiftstohigherwavelengthafterannealingorincreasingfilmthickness.Theelectricalresistivitydecreaseswithincreasingannealingtemperatureandfilmthickness.

简介：ZnSnanostructureswithdifferentdimensionsandstructure-relatedpropertieswerereviewedinthispaper.Thecrystallizationofnanostructuresfrom0D,1Dto3D,aswellastheheterogonouscounterparts,wassummarizedintheaspectofzincblende,wurtzitestructure,andtheircombinations.Furthermore,thestructure-relatedenergybandsandthecorrespondingphotoelectricpropertiesofZnSnanostructureswerealsofocused,inwhichwemadeabriefsummaryoftheco-relationsbetweenphotoluminescenceandcrystallography,especiallythedefectrelatedluminescencepropertiesofZnSnanocrystal.

简介：综述ZnS薄膜制备技术的特点.ZnS薄膜材料具有工艺容易控制、成本低等特点,极具市场发展潜力,尤其作为高阻层在CIGS太阳能电池的应用,有望替代传统使用的CdS膜.