Preparation and properties of CdS thin films grown by ILGAR method-中国期刊网

摘要 CdSthinfilmsweredepositedbytheionlayergasreaction(ILGAR)method.Structural,chemical,topographicaldevelopmentaswellasopticalandelectricalpropertiesofas-depositedandannealedthinfilmswereinvestigatedbyXRD,SEM,XPS,AFMandUV-VIS.Theresultsshowedthatthethinfilmsareuniform,compactandgoodinadhesiontothesubstrates,andthegrowthofthefilmsis2.8nm/cycle.Theevolutionofstructureundergoesfromthecubicstructuretothehexagonalonewithapreferredorientationalongthe(002)planeafterannealingat673K.AnamountofC,OandClimpuririescanbereducedbyincreasingthedryingtemperatureorbyannealinginN2atmosphere.ItwasfoundthatthebandgapoftheCdSfilmsshiftstohigherwavelengthafterannealingorincreasingfilmthickness.Theelectricalresistivitydecreaseswithincreasingannealingtemperatureandfilmthickness.

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Preparation and properties of CdS thin films grown by ILGAR method

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Preparation and properties of CdS thin films grown by ILGAR method

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