简介:Inthispaper,polycrystallinesiliconfilmsweredepositedbyelectroncyclotronresonanceplasma-enhancedchemicalvapordeposition(ECR-PECVD)usingSiH_4/ArandSiH_4/H_2gaseousmixture.EffectsofargonflowrateonthedepositionefficiencyandthefilmpropertywereinvestigatedbycomparingwithH_2.TheresultsindicatedthatthedepositionrateofusingArasdischargegaswas1.5-2timeshigherthanthatofusingH_2,whilethepreferredorientationsandthegrainsizesofthefilmswereanalogous.FilmcrystallinityincreasedwiththeincreaseofArflowrate.OptimizedflowratioofSiH_4toArwasobtainedasF(SiH_4):F(Ar)=10:70forthehighestdepositionrate.
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简介:UsingdoublecrystalX-raysdiffraction(DCXRD)andatomicforcemicroscopy(AFM),theresultsofGexSi1-xgrownUHV/CVDfromSi2H6andSiH4areanalyzedandcompared.Adsorbatescanmigratetotheenergy-favoringpositionduetotheslowgrowthratefromSiH4.Inthiscase,aSibufferthatisolatestheeffectofsubstrateonepilayercouldnotbegrown,whichresultsinapitpenetratingintoepilayerandbuffer.TheFWHMis0.055°inDCXRDfromSiH4.Thepresenceofdiffractionfringesisanindicationofanexcellentcrystallinequality,TheroughnessofthesurfaceisimprovedifgrownbySi2H6:however,thecrystalqualityoftheGex2Si1-xmaterialbecameworsethanthatfromSiH4duetomuchlargergrowthratefromSi2H6.ThecontentofGeisobtainedfromDCXRD,whichindicatesthegrowthratefromSi2H6islargest,thenGeH4andthatfromSiH4isleast.
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简介:РоссийскийспортвгодыВеликойОтечественнойвойныИзвестныйнамкомплексГТО1нетолькопомогалкрепитьобороннуюмощьСССР,ноиоткрывалфеноменальныеспортивныеталанты.
简介:Dibromobiphenylreactedwithcynomethylanioninammoniaunderirradiationtoformnucleophilicbis-substitutedproductinhighyieldwithoutsubstantialmonosubstitutedproduct.Quantumyieldsfortheformationsofbis-andmonosubstitutedproductswerefoundtobe85.6and2.3×10-6respectively,whilethecorrespondingpseudo-first-orderrateswere6.9×10-3and5.2×10-10mol.L-1.S-1.Blockupthepossibleelectrontransferof4-brome-4’-cyanomethylbiphenylylradicalanionto4-cyanometbyl-biphenylylradicalandbromineion.