简介：Developinganelectrostaticdischarge(ESD)protectiondevicewithabetterlatch-upimmunityhasbeenachallengingissueforthenanometercomplementarymetal-oxidesemiconductor(CMOS)technology.Inthiswork,animprovedgrounded-gateN-channelmetal-oxidesemiconductor(GGNMOS)transistortriggeredsilicon-controlledrectifier(SCR)structure,namedGGSCR,isproposedforhighholdingvoltageESDprotectionapplications.TheGGSCRdemonstratesadoublesnapbackbehaviorasaresultofprogressivetrigger-onoftheGGNMOSandSCR.Thedoublesnapbackmakestheholdingvoltageincreasefrom3.43Vto6.25Vascomparedwiththeconventionallow-voltageSCR.TheTCADsimulationsarecarriedouttoverifythemodesofoperationofthedevice.
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