简介：Geepilayersofdifferentthicknessesaregrownbymolecular-beamepitaxywithSbasasurfactantonSI(100)substrates,X-raydiffractionillustratesthattheseGethinfilmsarepartiallystrained.andthestrainsdecreasegraduallywithincreasingepilayerthickness,RamanspectrarevealadownwardshiftoftheGe-Gemodepeakastheepilayerthicknessincreases.Intheregionsofhighstrain,therelationshipbetweentheRamanshiftofthismodeandthestraininthepartiallyrelaxedsamplesisconsiderablydifferentfromthelinearrelationshipreportedbefore,whichismainlyattributedtothespatialconfinementeffectofphononsinananocrystal.

简介：

简介：利用同步辐射掠入射和常规X射线衍射，对Si(001）衬底上自组织生长Ge量子点组分和应变进行了研究。结果表明量子点为50％应变驰豫的GeSi合金量子点，其Ge组分为0．55。此外在掠入射X射线衍射Si(220）峰的高角旁观察到另外一个峰，对应于量子点周围衬底中由成岛引起的压应变。

简介：低温下用MBE方法生长了Ge／Si超晶格。X射线近边吸收限精细结构研究表明，Ge与Si再Ge／Si界面处存在化学混合。X射线反射及横向散射研究表明，Ge亚层上下表面的粗糙度呈反对称，下表面大的粗糙度来源于Ge向Si亚层中扩散形成SiGe混合组分结构：这种组分结构可以用一平均成份的SiGe合金层加以拟合，从而使得各亚层均有一个合理的粗糙度。旋转样品进行的X射线散射研究表明，这种SiGe的混合是各向同性的，这与透射电子显微镜的研究结构相一致。

简介：GaInP/GaAs/Getriple-junctionsolarcellswereirradiatedwith50keVand100keVprotonsatfluencesof5×1010cm-2,1×1011cm-2,1×1012cm-2,and1×1013cm-2.Theirperformancedegradationisanalyzedusingcurrent-voltagecharacteristicsandspectralresponsemeasurements,andthenthechangesinIsc,Voc,Pmaxandthespectralresponseofthecellsareobservedasfunctionsofprotonirradiationfluenceandenergy.Theresultsshowthatthespectralresponseofthetopcelldegradesmoresignificantlythanthatofthemiddlecell,and100keVproton-induceddegradationratesofIsc,VocandPmaxarelargercomparedwith50keVprotonirradiation.