摘要
Anovelburningtechniqueformakingasemiconductingsingle-walledcarbonnanotubes(SWNTs)transistorassembledbythedielectrophoreticforcewassuggested.Thefabricationprocessconsistedoftwosteps.First,toalignandattachabundleofSWNTsbetweenthesourceanddrain,thealternating(AC)voltagewasappliedtotheelectrodes.WhenabundleofSWNTswasconnectedbetweentwoelectrodes,someofmetallicnanotubesandsemi-conducingnanotubesexistedtogether.ThesecondstepistoburnthemetallicSWNTSbyapplyingthevoltagebetweentwoelectrodes.Withincreasingthevoltage,morecurrentflowedthroughthemetallicSWNTs,thus,themetallicSWNTsburntearlierthanthesemiconductingone.Thistechniqueenablestoobtainonlysemi-conductingSWNTsconnectioninthetransistor.ThroughtheI—Vcharacteristicgraph,themomentofmetallicSWNTsburningandthecharacteristicofsemi-conducingnanotubeswereverified.
出版日期
2011年10月09日（中国期刊网平台首次上网日期，不代表论文的发表时间）
