3-27 Characteristics of Luminescence of N Ion Irradiated LED-中国期刊网

摘要 Inthepresentwork,theLEDchipwasirradiatedbyusing59.6MeVNionsinaterminalchamberoftheSector-focusedcyclotron(SFC)intheNationalLabortaryofHeavy-ionAcceleratorsinLanzhou.The63MeVNionspenetratedthroughagoldfoilandscatteredinalargearea.Theenergyofionwasreducedto59.6MeVafterscatteringofthegoldfoil.TheLEDwasprovidedbytheSemiconductorLightingCenterinInstituteofSemiconductorinBeijing.TheluminencesoftheLEDbefore/afterirradiationweretestedthroughaintegratingsphereinSemiconductorLightingCenterinInstituteofSemiconductorinBeijing.Theluminancewastestedunderacurrentof350mA.Fig.1showstherelationshipbetweentheluminencesandtheirradiationfluences.Theirradiationledto

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3-27 Characteristics of Luminescence of N Ion Irradiated LED

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3-27 Characteristics of Luminescence of N Ion Irradiated LED

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